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FDS6680AS датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS6680AS датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDS6680AS Rev B 2(X) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 3.5 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) VGS = 0 V, IS = 7 A (Note 2) 0.5 0.6 0.7 V Trr Diode Reverse Recovery Time IF = 11.5A, 18 nS Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 3) 12 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in 2 pad of 2 oz copper b) 105°/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. |
Аналогичный номер детали - FDS6680AS |
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Аналогичное описание - FDS6680AS |
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