поискавой системы для электроныых деталей |
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FDS6990AS датащи(PDF) 5 Page - Fairchild Semiconductor |
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FDS6990AS датащи(HTML) 5 Page - Fairchild Semiconductor |
5 / 8 page 5 www.fairchildsemi.com FDS6990AS Rev. A1 Typical Characteristics 0 2 4 6 8 10 0246 8 10 12 Q g, GATE CHARGE (nC) I D =7.5A V DS = 10V 15V 20V 0 300 600 900 1200 1500 05 10 15 20 25 30 V DS, DRAIN TO SOURCE VOLTAGE (V) C iss C rss C oss f = 1MHz V GS = 0V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100s 100µs R DS(ON) LIMIT V GS = 10V SINGLE PULSE R JA = 135 oC/W T A = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) SINGLE PULSE R JA = 135°C/W T A = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. θ θ RθJA(t) = r(t) * RθJA RθJA = 135 °C/W TJ – TA = P * RθJA(t) Duty Cycle, D = t 1 / t2 P(pk) t1 t2 |
Аналогичный номер детали - FDS6990AS_08 |
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Аналогичное описание - FDS6990AS_08 |
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