поискавой системы для электроныых деталей |
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FDS8670 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS8670 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page Typical Characteristics (continued) 0 2 4 6 8 10 0 10 203040 5060 Qg, GATE CHARGE (nC) ID = 21A VDS = 10V 15V 20V 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss Crss Coss f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 125oC/W TA = 25oC 10ms 1ms 100µs 10s 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 125°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RθJA RθJA = 125 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8670 Rev D1 (W) |
Аналогичный номер детали - FDS8670_08 |
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Аналогичное описание - FDS8670_08 |
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