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STI14NM65N датащи(PDF) 5 Page - STMicroelectronics |
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STI14NM65N датащи(HTML) 5 Page - STMicroelectronics |
5 / 18 page STB/F/I/P/W14NM65N Electrical characteristics 5/18 Table 7. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD =325 V, ID = 6 A RG =4.7 Ω VGS = 10 V (see Figure 18) 11 13 55 20 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 12 48 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 12 A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) 390 5 25 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V, TJ = 150 °C (see Figure 20) 530 7 25 ns µC A |
Аналогичный номер детали - STI14NM65N |
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Аналогичное описание - STI14NM65N |
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