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STI15NM60ND датащи(PDF) 6 Page - STMicroelectronics |
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STI15NM60ND датащи(HTML) 6 Page - STMicroelectronics |
6 / 19 page Electrical characteristics STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND 6/19 Table 7. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) 17 20 47 28 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 14 56 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 14 A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =14 A, di/dt =100 A/µs, VDD = 100 V (see Figure 20) 148 910 12 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 14 A Tj = 150 °C (see Figure 20) 190 1280 13 ns nC A |
Аналогичный номер детали - STI15NM60ND |
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Аналогичное описание - STI15NM60ND |
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