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STB24NM65N датащи(PDF) 5 Page - STMicroelectronics

номер детали STB24NM65N
подробное описание детали  N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STB24NM65N датащи(HTML) 5 Page - STMicroelectronics

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STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
Electrical characteristics
5/19
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
dv/dt (1)
1.
Characteristic value at turn off on inductive load
Drain source voltage slope
VDD= 520 V, ID=19 A,
VGS=10 V
35
V/ns
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating, @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 9.5 A
0.16
0.19
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS= 15 V, ID = 9.5 A
14
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
2500
120
10
pF
pF
pF
Coss eq
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 520 V
310
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 19 A,
VGS = 10 V,
(see Figure 19)
70
10
40
nC
nC
nC
RG
Gate input resistance
f=1 MHz gate DC bias = 0
Test signal level = 20 mV
open drain
2.5


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