поискавой системы для электроныых деталей |
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2SJ555-E датащи(PDF) 4 Page - Renesas Technology Corp |
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2SJ555-E датащи(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SJ555 Rev.3.00 Sep 07, 2005 page 4 of 7 50 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 10 20 30 40 Static Drain to Source on State Resistance vs. Temperature Pulse Test ID = –50 A ID = –60 A –10 A, –20 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 100 30 3 10 0.3 1 0.1 –0.1 –0.3 –1 –3 –30 –10 –100 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.1 –0.3 –1 –3 –10 –30 –100 1000 500 100 200 50 10 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 50000 10000 20000 5000 500 200 2000 1000 100 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –100 –80 –60 –40 –20 Dynamic Input Characteristics 80 160 240 320 400 VDS VGS 1000 100 200 500 50 20 10 –0.3 –1 –3 –30 –10 –100 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –10 V –25 V –50 V VDD = –50 V –25 V –10 V –10 V VGS = –4 V –20 A –50 A –10 A VGS = –10 V, VDD = –30 V PW = 10 µs, duty ≤ 1 % |
Аналогичный номер детали - 2SJ555-E |
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Аналогичное описание - 2SJ555-E |
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