2SK3081 datasheet(4/7 Pages) RENESAS

номер детали	2SK3081

подробное описание детали	Silicon N Channel MOS FET High Speed Power Switching

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2SK3081

Rev.4.00 Sep 07, 2005 page 4 of 6

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Forward Transfer Admittance

vs. Drain Current

Drain Current ID (A)

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Typical Capacitance

vs. Drain to Source Voltage

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

Gate Charge Qg (nc)

Switching Characteristics

Drain Current ID (A)

50

40

30

20

10

–40

0

40

80

120

160

0

0.1

0.3

1

3

10

5

1

2

0.5

VGS = 4 V

10 V

ID = 20 A

10 A

10, 20 A

50 A

30

20

50

100

25

°C

Tc = –25

°C

75

°C

VDS = 10 V

Pulse Test

0.1

0.3

1

3

10

30

100

0

10

20

30

40

50

500

10000

1000

2000

5000

50

40

30

20

10

0

20

16

12

8

4

20

40

60

80

100

0

1000

500

100

200

20

50

10

0.1

0.3

3

10

100

1000

500

100

200

20

50

10

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

100

200

5

30

1

ID = 45 A

VGS

VDS

VDD = 5 V

10 V

15 V

VDD = 15 V

10 V

5 V

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

VGS = 10 V, VDD = 10 V

PW = 5

µs, duty < 1 %

tr

td(on)

td(off)

tf

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Аналогичный номер детали - 2SK3081

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