2SC2620QBTL-E datasheet(2/8 Pages) RENESAS

номер детали	2SC2620QBTL-E

подробное описание детали	Silicon NPN Epitaxial Planar

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2SC2620

Rev.2.00 Aug 10, 2005 page 2 of 7

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

30

—

V

IC = 10

µA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

20

—

V

IC = 1 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

4

—

V

IE = 10

µA, IC = 0

Collector cutoff current

ICBO

—

0.5

µA

VCB = 10 V, IC = 0

Emitter cutoff current

IEBO

—

0.5

µA

VEB = 2 V, IC = 0

DC current transfer ratio

hFE*

1

60

—

200

VCE = 6 V, IC = 1 mA

Collector to emitter saturation voltage

VCE(sat)

—

0.17

—

V

IC = 20 mA, IB = 4 mA

Base to emitter voltage

VBE

—

0.72

—

V

VCE = 6 mA, IC = 1 mA

Gain bandwidth product

fT

—

940

—

MHz

VCE = 6 V, IC = 5 mA

Collector output capacitance

Cob

—

0.9

—

pF

VCB = 10 V, IE = 0, f = 1 MHz

Note:

1. The 2SC2620 is grouped by hFE as follows.

Grade

B

C

Mark

QB

QC

hFE

60 to 120

100 to 200

Аналогичный номер детали - 2SC2620QBTL-E

производитель	номер детали	датащи	подробное описание детали
Hitachi Semiconductor	2SC2620	24Kb / 5P	Silicon NPN Epitaxial Planar

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Аналогичное описание - 2SC2620QBTL-E

производитель	номер детали	датащи	подробное описание детали
Hitachi Semiconductor	2SC1907	39Kb / 7P	Silicon NPN Epitaxial Planar
	2SC2776	24Kb / 5P	Silicon NPN Epitaxial Planar
	2SC460	51Kb / 13P	Silicon NPN Epitaxial Planar
Renesas Technology Corp	2SC1907	164Kb / 6P	Silicon NPN Epitaxial Planar
Renesas Technology Corp	2SC5852	88Kb / 6P	Silicon NPN Epitaxial Planar
Guangdong Kexin Industr...	2SC3930	45Kb / 1P	Silicon NPN Epitaxial Planar
Hitachi Semiconductor	2SC1906	45Kb / 8P	Silicon NPN Epitaxial Planar
	2SC2620	24Kb / 5P	Silicon NPN Epitaxial Planar
	2SC3391	24Kb / 5P	Silicon NPN Epitaxial Planar
	2SC4693	30Kb / 6P	Silicon NPN Epitaxial Planar
List of Unclassifed Man...	2SC1377	160Kb / 3P	SILICON NPN EPITAXIAL PLANAR

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