поискавой системы для электроныых деталей |
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STB25NM60N датащи(PDF) 5 Page - STMicroelectronics |
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STB25NM60N датащи(HTML) 5 Page - STMicroelectronics |
5 / 18 page STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Electrical characteristics 5/18 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD =300 V, ID = 10 A RG =4.7 Ω VGS = 10 V (see Figure 18) 24.5 18 94 24 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 21 84 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 21 A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, di/dt = 100 A/µs VDD = 100 V (see Figure 23) 427 7.2 33.6 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 23) 526 9.1 34.5 ns µC A |
Аналогичный номер детали - STB25NM60N |
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Аналогичное описание - STB25NM60N |
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