2SJ217-E datasheet(4/7 Pages) RENESAS

номер детали	2SJ217-E

подробное описание детали	Silicon P Channel MOS FET

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2SJ217

Rev.2.00 Sep 07, 2005 page 4 of 6

0.1

–40

0

40

80

120

160

Case Temperature

Tc (°C)

0

0.02

0.04

0.06

0.08

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

–10 V

VGS = –4 V

ID = –50 A

ID = –20 A

–10 A, –20 A

–10 A

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

200

100

20

50

10

2

5

–0.5

–1

–2

–5

–10

–20

–50

Tc = –25°C

75°C

VDS = –10 V

Pulse Test

25°C

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

–0.5

–1

–2

–5

–10

–20

–50

5000

2000

1000

200

500

100

50

di / dt = 50 A /

µs, V

GS = 0

Ta = 25°C, Pulse Test

0

–10

–20

–30

–40

–50

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

10000

5000

2000

1000

500

200

100

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

0

Gate Charge

Qg (nc)

0

–20

–16

–12

–8

–4

–100

–80

–60

–40

–20

Dynamic Input Characteristics

40

80

120

160

200

VDS

VGS

VDD = –10 V

–25 V

–50 V

VDD = –10 V

–25 V

–50 V

ID = –45 A

1000

500

200

50

100

20

10

–1

–2

–5

–10

–20

–50

–0.5

tf

tr

td(off)

td(on)

Drain Current

ID (A)

Switching Characteristics

VGS = –10 V, VDD = –30 V

PW = 2

µs, duty ≤ 1 %

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Аналогичный номер детали - 2SJ217-E

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