поискавой системы для электроныых деталей |
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2SJ319STL-E датащи(PDF) 4 Page - Renesas Technology Corp |
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2SJ319STL-E датащи(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SJ319(L), 2SJ319(S) Rev.2.00 Sep 07, 2005 page 4 of 7 5 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 1 2 3 4 Static Drain to Source on State Resistance vs. Temperature VGS = –10 V Pulse Test ID = –5 A –2 A –1 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 3 2 0.5 1 0.2 0.1 –0.05 –0.1 –0.2 –0.5 –1 –5 –2 –10 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.05 –0.1 –0.2 –0.5 –1 –2 –5 500 200 100 20 50 10 5 di / dt = 50 A / µs, V GS = 0 duty ≤ 1 %, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 1000 200 500 100 50 20 10 5 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –500 –400 –300 –200 –100 Dynamic Input Characteristics 4 8 12 16 20 VDS VGS 500 200 100 20 50 10 5 –0.1 –0.2 –0.5 –1 –5 –2 –10 –0.05 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –50 V –100 V –150 V VDD = –150 V –100 V –50 V VGS = –10 V, VDD = –30 V PW = 2 µs, duty ≤ 1 % |
Аналогичный номер детали - 2SJ319STL-E |
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Аналогичное описание - 2SJ319STL-E |
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