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2SJ484 датащи(PDF) 2 Page - Renesas Technology Corp |
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2SJ484 датащи(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SJ484 Rev.3.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –2 A Drain peak current ID (pulse) Note 1 –4 A Body to drain diode reverse drain current IDR –2 A Channel dissipation Pch Note 2 1 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. When using the aluminium ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –30 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V RDS (on) — 0.18 0.23 Ω ID = –1 A, VGS = –10 V Note 3 Static drain to source on state resistance RDS (on) — 0.3 0.45 Ω ID = –1 A, VGS = –4 V Note 3 Forward transfer admittance |yfs| 1.2 2.0 — S ID = –1 A, VDS = –10 V Note 3 Input capacitance Ciss — 230 — pF Output capacitance Coss — 140 — pF Reverse transfer capacitance Crss — 50 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 10 — ns Rise time tr — 30 — ns Turn-off delay time td (off) — 35 — ns Fall time tf — 30 — ns VGS = –10 V ID = –1 A RL = 30 Ω Body to drain diode forward voltage VDF — –0.95 — V IF = –2 A, VGS = 0 Body to drain diode reverse recovery time trr — 60 — ns IF = –2 A, VGS = 0 diF/dt = 50 A/ µs Note: 3. Pulse test |
Аналогичный номер детали - 2SJ484 |
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Аналогичное описание - 2SJ484 |
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