поискавой системы для электроныых деталей |
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2SJ530STL-E датащи(PDF) 4 Page - Renesas Technology Corp |
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2SJ530STL-E датащи(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page 2SJ530(L), 2SJ530(S) Rev.5.00 Sep 07, 2005 page 4 of 8 0.5 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.1 0.2 0.3 0.4 Static Drain to Source on State Resistance vs. Temperature Pulse Test Pulse Test ID = –15 A ID = –15 A –5 A, –10 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 100 30 3 10 0.3 1 0.1 –0.1 –0.3 –1 –3 –30 –10 –100 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.1 –0.2 –0.5 –1 –2 –10 –5 –20 500 200 50 100 20 5 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 5000 1000 2000 500 200 20 50 100 10 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –100 –80 –60 –40 –20 Dynamic Input Characteristics 816 24 32 40 VDS VGS 1000 100 300 30 3 10 1 –0.2 –0.5 –1 –5 –2 –10 –20 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –10 V –25 V –50 V VDD = –50 V –25 V –10 V –10 V VGS = –4 V –10 A –15 A –5 A VGS = –10 V, VDD = –30 V PW = 5 µs, duty ≤ 1 % |
Аналогичный номер детали - 2SJ530STL-E |
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Аналогичное описание - 2SJ530STL-E |
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