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August 2001

.

STY140NS10

N-CHANNEL 100V - 0.009

Ω - 140A MAX247™

MESH OVERLAY™ POWER MOSFET

s

s

STANDARD THRESHOLD DRIVE

s

100% AVALANCHE TESTED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an advanced

family

of

power

MOSFETs

with

outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprietary edge termination

structure,

gives

the

lowest

RDS(on)

per

area,

exceptional

avalanche

and

dv/dt

capabilities

and

unrivalled gate charge and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SWITCHING SPEED

s

SWITCH MODE POWER SUPPLY (SMPS)

TYPE

STY140NS10

100V

<0.011

Ω

140A

1

2

3

ABSOLUTE MAXIMUM RATINGS

(

Symbol

Parameter

Value

Unit

100

V

100

V

Gate- source Voltage

± 20

V

140

A

99

A

Drain Current (pulsed)

560

A

450

W

Derating Factor

3

W/°C

Single Pulse Avalanche Energy

2900

mJ

Peak Diode Recovery voltage slope

5

V/ns

Storage Temperature

-55 to 175

°C

Operating Junction Temperature

-55 to 175

°C

INTERNAL SCHEMATIC DIAGRAM