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STD5N20 датащи(PDF) 3 Page - STMicroelectronics |
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STD5N20 датащи(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 STD5N20 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 100 V, ID = 3 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 18 ns tr Rise Time 30 ns Qg Total Gate Charge VDD = 160V, ID = 6 A, VGS = 10V 19 27 nC Qgs Gate-Source Charge 4.5 nC Qgd Gate-Drain Charge 7.5 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 160V, ID = 6 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 40 ns tf Fall Time 10 ns tc Cross-over Time 65 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 6 A ISDM (2) Source-drain Current (pulsed) 24 A VSD (1) Forward On Voltage ISD = 6 A, VGS = 0 1.5 V trr Reverse Recovery Time ISD =6 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 155 ns Qrr Reverse Recovery Charge 700 nC IRRM Reverse Recovery Current 9 A Thermal Impedance Safe Operating Area |
Аналогичный номер детали - STD5N20 |
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Аналогичное описание - STD5N20 |
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