STU95N4F3 datasheet(5/14 Pages) STMICROELECTRONICS

номер детали	STU95N4F3

подробное описание детали	N-channel 40V - 5.4m廓 - 80A - DPAK - TO-220 - IPAK STripFET??Power MOSFET

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5 / 14 page

STD95N4F3 - STP95N4F3 - STU95N4F3

Electrical characteristics

5/14

Table 5.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD=20V, ID= 40A,

RG=4.7Ω, VGS=10V

(see Figure 15)

15

50

ns

td(off)

tf

Turn-off delay time

Fall time

VDD=20V, ID= 40A,

RG=4.7Ω, VGS=10V

(see Figure 15)

40

15

ns

Table 6.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

80

320

A

VSD

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD=80A, VGS=0

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=80A,

di/dt = 100A/µs,

VDD=30V, Tj=150°C

(see Figure 14)

45

60

2.8

ns

nC

A

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STMicroelectronics	STU95N4F3	336Kb / 14P	N-channel 40V - 5.4mOHM - 80A - DPAK - TO-220 - IPAK STripFET TM Power MOSFET

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Аналогичный номер детали - STU95N4F3

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