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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TDA2030A датащи(PDF) 3 Page - STMicroelectronics |
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TDA2030A датащи(HTML) 3 Page - STMicroelectronics |
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3 / 15 page  ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vs Supply Voltage ± 22 V Vi Input Voltage Vs Vi Differential Input Voltage ± 15 V Io Peak Output Current (internally limited) 3.5 A Ptot Total Power Dissipation at Tcase =90 °C 20 W Tstg,Tj Storage and Junction Temperature – 40 to + 150 °C ELECTRICAL CHARACTERISTICS (Refer to the test circuit, VS = ± 16V, Tamb =25oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Vs Supply Voltage ± 6 ± 22 V Id Quiescent Drain Current 50 80 mA Ib Input Bias Current VS = ± 22V 0.2 2 µA Vos Input Offset Voltage VS = ± 22V ± 2 ± 20 mV Ios Input Offset Current ± 20 ± 200 nA PO Output Power d = 0.5%, Gv = 26dB f = 40 to 15000Hz RL =4 Ω RL =8 Ω VS = ± 19V RL =8 Ω 15 10 13 18 12 16 W BW Power Bandwidth Po = 15W RL =4 Ω 100 kHz SR Slew Rate 8 V/ µsec Gv Open Loop Voltage Gain f = 1kHz 80 dB Gv Closed Loop Voltage Gain f = 1kHz 25.5 26 26.5 dB d Total Harmonic Distortion Po = 0.1 to 14W RL =4 Ω f = 40 to 15 000Hz f = 1kHz Po = 0.1 to 9W, f = 40 to 15 000Hz RL =8 Ω 0.08 0.03 0.5 % % % d2 Second Order CCIF Intermodulation Distortion PO = 4W, f2 –f1 = 1kHz, RL =4 Ω 0.03 % d3 Third Order CCIF Intermodulation Distortion f1 = 14kHz, f2 = 15kHz 2f1 –f2 = 13kHz 0.08 % eN Input Noise Voltage B = Curve A B = 22Hz to 22kHz 2 310 µV µV iN Input Noise Current B = Curve A B = 22Hz to 22kHz 50 80 200 pA pA S/N Signal to Noise Ratio RL =4 Ω,Rg = 10kΩ, B = Curve A PO = 15W PO =1W 106 94 dB dB Ri Input Resistance (pin 1) (open loop) f = 1kHz 0.5 5 M Ω SVR Supply Voltage Rejection RL =4 Ω,Rg = 22kΩ Gv = 26dB, f = 100 Hz 54 dB Tj Thermal Shut-down Junction Temperature 145 °C TDA2030A 3/15 |
Аналогичный номер детали - TDA2030A |
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Аналогичное описание - TDA2030A |
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