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IRF9Z22 датащи(PDF) 1 Page - Vishay Siliconix

номер детали IRF9Z22
подробное описание детали  Power MOSFET
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF9Z22 датащи(HTML) 1 Page - Vishay Siliconix

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Document Number: 91350
www.vishay.com
S-Pending-Rev. A, 10-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRF9Z22, SiHF9Z22
Vishay Siliconix
FEATURES
• P-Channel Versatility
• Compact Plastic Package
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• Excellent Temperature Stability
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The
P-Channel
Power
MOSFET’s
are
designed
for
application which require the convenience of reverse polarity
operation. They retain all of the features of the more common
N-Channel Power MOSFET’s such as voltage control, very
fast switching, ease of paralleling, and excellent temperature
stability.
P-Channel Power MOSFETs are intended for use in power
stages where complementary symmetry with N-Channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by the
reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L =100 µH, RG = 25 Ω
c. ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 0.063" (1.6 mm) from case.
PRODUCT SUMMARY
VDS (V)
- 50
RDS(on) (Ω)VGS = - 10 V
0.33
Qg (Max.) (nC)
26
Qgs (nC)
6.2
Qgd (nC)
8.6
Configuration
Single
S
G
D
P-Channel MOSFET
TO-220
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free
IRF9Z22PbF
SiHF9Z22-E3
SnPb
IRF9Z22
SiHF9Z22
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 50
V
Gate-Source Voltage
VGS
± 20
Drain-Gate Voltage (RGS = 20 KΩ)VGDR
- 50
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
ID
- 8.9
A
TC = 100 °C
- 5.6
Pulsed Drain Currenta
IDM
- 36
Linear Derating Factor
0.32
W/°C
Inductive Current, Clamped
L = 100 µH
ILM
- 36
A
Unclamped Inductive Current (Avalanche Current)
IL
- 2.2
A
Maximum Power Dissipation
TC = 25 °C
PD
40
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply


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