IRF9Z22PBF datasheet(2/9 Pages) VISHAY

номер детали	IRF9Z22PBF

подробное описание детали	Power MOSFET

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Document Number: 91350

2

S-Pending-Rev. A, 10-Jun-08

IRF9Z22, SiHF9Z22

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-80

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

1.0

-

Maximum Junction-to-Case (Drain)

RthJC

-3.1

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 50

-

V

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 2.0

-

- 4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

± 500

nA

Zero Gate Voltage Drain Current

IDSS

VDS = max. rating, VGS = 0 V

-

- 250

µA

VDS = max. rating x 0,8, VGS = 0 V, TJ =125°C

-

- 1000

Drain-Source On-State Resistance

RDS(on)

VGS = - 10 V

ID = - 5.6 Ab

-

0.28

0.33

Ω

Forward Transconductance

gfs

VDS = 2 x VGS, IDS = - 5.6 Ab

2.3

3.5

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = - 25 V,

f = 1.0 MHz, see fig. 9

-

480

-

pF

Output Capacitance

Coss

-

320

-

Reverse Transfer Capacitance

Crss

-58

-

Total Gate Charge

Qg

VGS = - 10 V

ID = - 9.7 A, VDS = - 0.8

max. rating. see fig. 17

-17

26

nC

Gate-Source Charge

Qgs

-4.1

6.2

Gate-Drain Charge

Qgd

-5.7

8.6

Turn-On Delay Time

td(on)

VDD = - 25 V, ID = - 9.7 A,

RG = 18 Ω, RD = 2.4 Ω, see fig. 16

(MOSFET switching times are

essentially independent of operating

temperature)

-8.2

12

ns

Rise Time

tr

-57

86

Turn-Off Delay Time

td(off)

-12

18

Fall Time

tf

-25

38

Internal Drain Inductance

LD

Between lead,

6 mm (0.25") from

package and center

of die contact

-4.5

-

nH

Internal Source Inductance

LS

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

- 9.7

A

Pulsed Diode Forward Currenta

ISM

--

- 39

Body Diode Voltage

VSD

TJ = 25 °C, IS = - 9.7 A, VGS = 0 Vb

--

- 6.3

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = - 9.7 A, dI/dt = 100 A/µsb

56

110

280

ns

Body Diode Reverse Recovery Charge

Qrr

0.17

0.34

0.85

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

S

G

S

D

G

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