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IRFP9240 датащи(PDF) 2 Page - Vishay Siliconix

номер детали IRFP9240
подробное описание детали  Power MOSFET
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производитель  VISHAY [Vishay Siliconix]
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Document Number: 91239
2
S-Pending-Rev. A, 26-Jun-08
IRFP9240, SiHFP9240
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-40
°C/W
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-0.83
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 200
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.20
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 200 V, VGS = 0 V
-
-
- 100
µA
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
-
-
- 500
Drain-Source On-State Resistance
RDS(on)
VGS = - 10 V
ID = - 7.2 Ab
-
-
0.50
Ω
Forward Transconductance
gfs
VDS = - 50 V, ID = - 7.2 A
4.2
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
-
1200
-
pF
Output Capacitance
Coss
-
370
-
Reverse Transfer Capacitance
Crss
-81
-
Total Gate Charge
Qg
VGS = - 10 V
ID = - 11 A, VDS = - 160 V
see fig. 6 and 13b
--
44
nC
Gate-Source Charge
Qgs
--
7.1
Gate-Drain Charge
Qgd
--
27
Turn-On Delay Time
td(on)
VDD = - 100 V, ID = - 11 A
RG = 9.1 Ω, RD= 8.6 Ω,
see fig. 10b
-14
-
ns
Rise Time
tr
-43
-
Turn-Off Delay Time
td(off)
-39
-
Fall Time
tf
-38
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-5.0
-
nH
Internal Source Inductance
LS
-13
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
- 12
A
Pulsed Diode Forward Currenta
ISM
--
- 48
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 12 A, VGS = 0 Vb
--
- 5.0
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/µsb
-
250
300
ns
Body Diode Reverse Recovery Charge
Qrr
-2.9
3.6
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


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