поискавой системы для электроныых деталей |
|
IRLL014PBF датащи(PDF) 1 Page - Vishay Siliconix |
|
IRLL014PBF датащи(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91319 www.vishay.com S-81392-Rev. A, 07-Jul-08 1 Power MOSFET IRLL014, SiHLL014 Vishay Siliconix FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive •RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 16 mH, RG = 25 Ω, IAS = 2.7 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω)VGS = 5.0 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single N-Channel MOSFET G D S SOT-223 Available RoHS* COMPLIANT ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free IRLL014PbF IRLL014TRPbFa SiHLL014-E3 SiHLL014T-E3a SnPb IRLL014 IRLL014TRa SiHLL014 SiHLL014Ta ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 10 V TC = 25 °C ID 2.7 A TC = 100 °C 1.7 Pulsed Drain Currenta IDM 22 Linear Derating Factor 0.025 W/°C Linear Derating Factor (PCB Mount)e 0.017 Single Pulse Avalanche Energyb EAS 100 mJ Repetitive Avalanche Currenta IAR 2.7 A Repetitive Avalanche Energya EAR 0.31 mJ Maximum Power Dissipation TC = 25 °C PD 3.1 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.0 Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
Аналогичный номер детали - IRLL014PBF |
|
Аналогичное описание - IRLL014PBF |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |