поискавой системы для электроныых деталей |
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SB10H150CT-1 датащи(PDF) 3 Page - Vishay Siliconix |
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SB10H150CT-1 датащи(HTML) 3 Page - Vishay Siliconix |
3 / 5 page MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor Document Number: 88779 Revision: 18-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode 0.1 0.3 0.2 0.4 0.6 0.8 1.0 0.5 0.7 0.9 1.1 1.2 100 10 0.1 1 Instantaneous Forward Voltage (V) T J = 125 °C T J = 175 °C T J = 25 °C T J = 75 °C 0.1 0.01 1 10 100 1000 10 000 10 20 30 50 70 100 40 60 8090 Percent of Rated Peak Reverse Voltage (%) T J = 125 °C T J = 175 °C T J = 25 °C T J = 75 °C Figure 5. Typical Junction Capacitance Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 10 1 100 100 1000 10 000 0.1 10 Reverse Voltage (V) 0.01 10 1 100 10 100 0.1 0.1 1 MBRF MBR, MBRB t - Pulse Duration (s) |
Аналогичный номер детали - SB10H150CT-1 |
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Аналогичное описание - SB10H150CT-1 |
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