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SI1016X-T1-GE3 датащи(PDF) 1 Page - Vishay Siliconix

номер детали SI1016X-T1-GE3
подробное описание детали  Complementary N- and P-Channel 20-V (D-S) MOSFET
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Vishay Siliconix
Si1016X
Document Number: 71168
S-80427-Rev. D, 03-Mar-08
www.vishay.com
1
Complementary N- and P-Channel 20-V (D-S) MOSFET
FEATURES
Halogen-free Option Available
TrenchFET® Power MOSFETs
2000 V ESD Protection
Very Small Footprint
High-Side Switching
Low On-Resistance:
N-Channel, 0.7
Ω
P-Channel, 1.2
Ω
Low Threshold: ± 0.8 V (Typ.)
Fast Switching Speed: 14 ns
1.8 V Operation
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
APPLICATIONS
Replace Digital Transistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (mA)
N-Channel
20
0.70 at VGS = 4.5 V
600
0.85 at VGS = 2.5 V
500
1.25 at VGS = 1.8 V
350
P-Channel
- 20
1.2 at VGS = - 4.5 V
- 400
1.6 at VGS = - 2.5 V
- 300
2.7 at VGS = - 1.8 V
- 150
Top View
3
1
D2
G2
S1
5
2
4
6
D1
S2
G1
SOT-563
SC-89
Marking Code: A
Ordering Information: Si1016X-T1-E3 (Lead (Pb)-free)
Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
5 s
Steady State
5 s
Steady State
Drain-Source Voltage
VDS
20
- 20
V
Gate-Source Voltage
VGS
± 6
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
515
485
- 390
- 370
mA
TA = 85 °C
370
350
- 280
- 265
Pulsed Drain Currentb
IDM
650
- 650
Continuous Source Current (Diode Conduction)a
IS
450
380
- 450
- 380
Maximum Power Dissipationa
TA = 25 °C
PD
280
250
280
250
mW
TA = 85 °C
145
130
145
130
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
RoHS
COMPLIANT


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