SI1905BDH datasheet(1/7 Pages) VISHAY

номер детали	SI1905BDH

подробное описание детали	Dual P-Channel 1.8-V (G-S) MOSFET

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Vishay Siliconix

Si1905BDH

New Product

Document Number: 74638

S-72340-Rev. B, 05-Nov-07

www.vishay.com

1

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

APPLICATIONS

• Load Switch for Portable Devices

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under Steady State conditions is 400 °C/W.

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

Qg (Typ)

- 8

0.542 at VGS = - 4.5 V

- 0.63

10.5 nC

0.798 at VGS = - 2.5 V

- 0.52

1.2 at VGS = - 1.8 V

- 0.20

Ordering Information: Si1905BDH-T1-E3 (Lead (Pb)-free)

SOT-363

SC-70 (6-LEADS)

Marking Code

DJ

XX

Lot Traceability

and Date Code

Part #

Code

6

4

1

2

3

5

Top View

S1

G1

D2

D1

G2

S2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 8

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

a, b

TC = 25 °C

ID

- 0.63

A

TC = 70 °C

- 0.50

TA = 25 °C

- 0.58a, b

TA = 70 °C

- 0.47a, b

Pulsed Drain Current (10 µs Pulse Width)

IDM

- 1.8

Continuous Source-Drain Diode Currenta, b

TC = 25 °C

IS

- 0.30

TA = 25 °C

- 0.25a, b

Maximum Power Dissipationa, b

TC = 25 °C

PD

0.357

W

TC = 70 °C

- 0.301

TA = 25 °C

0.301a, b

TA = 70 °C

0.95a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 5 s

RthJA

360

415

°C/W

Steady State

400

460

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

300

350

RoHS

COMPLIANT

Аналогичный номер детали - SI1905BDH

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI1905DL	57Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Nov-99
	SI1905DL	100Kb / 5P	Dual P-Channel 1.8 V (G-S) MOSFET 18-Jul-08
	SI1905DL	100Kb / 5P	Dual P-Channel 1.8 V (G-S) MOSFET 18-Jul-08

More results

Аналогичное описание - SI1905BDH

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI6973DQ	66Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 22-May-00
	SI4965DY	62Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. B, 13-Oct-03
	SI4967DY	62Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. C, 13-Oct-03
	SI5935DC	73Kb / 5P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 16-Jun-03
	SI5935DC-T1-E3	233Kb / 10P	Dual P-Channel 1.8 V (G-S) MOSFET Rev. C, 19-Apr-10
Guangdong Kexin Industr...	KI5935DC	66Kb / 2P	Dual P-Channel 1.8-V (G-S) MOSFET
Vishay Siliconix	SI6967DQ-T1-E3	216Kb / 10P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. D, 02-Jun-08
	SI4967DY	103Kb / 5P	Dual P-Channel 1.8-V (G-S) MOSFET 01-Jan-2022
	SI5905DC	112Kb / 5P	Dual P-Channel 1.8 V (G-S) MOSFET
	SI1905DL	57Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Nov-99
	SI1907DL	202Kb / 3P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. B, 28-Feb-05

More results

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