поискавой системы для электроныых деталей |
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SI1965DH-T1-E3 датащи(PDF) 6 Page - Vishay Siliconix |
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SI1965DH-T1-E3 датащи(HTML) 6 Page - Vishay Siliconix |
6 / 7 page www.vishay.com 6 Document Number: 68765 S-81725-Rev. A, 04-Aug-08 Vishay Siliconix Si1965DH New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68765. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 220 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.02 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 110 10-1 10-4 2 1 0.1 0.01 0.2 0.1 0.05 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 0.02 |
Аналогичный номер детали - SI1965DH-T1-E3 |
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Аналогичное описание - SI1965DH-T1-E3 |
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