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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SI2309CDS-T1-E3 датащи(PDF) 2 Page - Vishay Siliconix |
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SI2309CDS-T1-E3 датащи(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page  www.vishay.com 2 Document Number: 68980 S-82584-Rev. A, 27-Oct-08 Vishay Siliconix Si2309CDS New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 65 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 4.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µA VDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = - 10 V - 6 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 1.25 A 0.285 0.345 Ω VGS = - 4.5 V, ID = - 1.0 A 0.360 0.450 Forward Transconductancea gfs VDS = - 10 V, ID = - 1.0 A 2.8 S Dynamicb Input Capacitance Ciss VDS = - 30 V, VGS = 0 V, f = 1 MHz 210 pF Output Capacitance Coss 28 Reverse Transfer Capacitance Crss 20 Total Gate Charge Qg VDS = - 30 V, VGS = - 4.5 V, ID = - 1.25 A 2.7 4.1 nC Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 1.2 Gate Resistance Rg f = 1 MHz 7 Ω Turn-On Delay Time td(on) VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω 40 60 ns Rise Time tr 35 55 Turn-Off Delay Time td(off) 15 25 Fall Time tf 10 20 Turn-On Delay Time td(on) VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 510 Rise Time tr 10 20 Turn-Off Delay Time td(off) 15 25 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 1.4 A Pulse Diode Forward Current ISM - 8 Body Diode Voltage VSD IS = - 0.75 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 1.25 A, dI/dt = 100 A/µs, TJ = 25 °C 30 60 ns Body Diode Reverse Recovery Charge Qrr 33 60 nC Reverse Recovery Fall Time ta 18 ns Reverse Recovery Rise Time tb 12 |
Аналогичный номер детали - SI2309CDS-T1-E3 |
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Аналогичное описание - SI2309CDS-T1-E3 |
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