SI5481DU-T1-GE3 datasheet(1/7 Pages) VISHAY

номер детали	SI5481DU-T1-GE3

подробное описание детали	P-Channel 20-V (D-S) MOSFET

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Vishay Siliconix

Si5481DU

New Product

Document Number: 73777

S-81448-Rev. C, 23-Jun-08

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

- 20

0.022 at VGS = - 4.5 V

- 12a

20 nC

0.029 at VGS = - 2.5 V

- 12a

0.041 at VGS = - 1.8 V

- 12a

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 90 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 12a

A

TC = 70 °C

- 12a

TA = 25 °C

- 9.7b, c

TA = 70 °C

- 7.8b, c

Pulsed Drain Current

IDM

- 20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 14.8

TA = 25 °C

- 2.6b, c

Maximum Power Dissipation

TC = 25 °C

PD

17.8

W

TC = 70 °C

11.4

TA = 25 °C

3.1b, c

TA = 70 °C

2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 5 s

RthJA

30

40

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

5.5

7

Marking Code

BC

XXX

Lot Traceability

and Date Code

Part #

Code

S

G

D

P-Channel MOSFET

Ordering Information: Si5481DU-T1-GE3 (Lead (Pb)-free and Halogen-free)

Bottom View

PowerPAK ChipFET Single

D

G

1

2

8

7

6

5

D

S

3

4

S

RoHS

COMPLIANT

FEATURES

•

Halogen-free

•TrenchFET® Power MOSFET

•

New thermally Enhanced PowerPAK®

ChipFET® Package

- Small Footprint Area

- Low On-Resistance

- Thin 0.8 mm Profile

APPLICATIONS

• Load Switch, Battery Switch, PA Switch and Charger

Switch for Portable Devices

Аналогичный номер детали - SI5481DU-T1-GE3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI5480DU	122Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Jun-08
	SI5482DU	101Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Jun-08
	SI5484DU	128Kb / 7P	N-Channel 20-V (D-S) MOSFET Rev. B, 23-Jun-08
Vaishali Semiconductor	SI5484DU-RC	203Kb / 3P	R-C Thermal Model Parameters
Vishay Siliconix	SI5484DU-T1-GE3	128Kb / 7P	N-Channel 20-V (D-S) MOSFET Rev. B, 23-Jun-08

More results

Аналогичное описание - SI5481DU-T1-GE3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI9400DY	58Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. K, 02-Mar-98
	SI9424BDY	44Kb / 5P	P-Channel 20-V (D-S) MOSFET Rev. A, 07-Oct-02
	SI8407DB	69Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. B, 17-Jan-05
	SI7401DN	240Kb / 3P	P-Channel 20-V (D-S) MOSFET 31-May-01
	SI7403BDN	106Kb / 8P	P-Channel 20-V (D-S) MOSFET Rev. A, 21-Mar-05
	SIS407DN-T1-GE3	548Kb / 13P	P-Channel 20 V (D-S) MOSFET Rev. B, 06-Sep-10
	SI4477DY-T1-GE3	261Kb / 10P	P-Channel 20-V (D-S) MOSFET Rev. A, 18-May-09
	SIA431DJ	221Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. B, 21-May-12
	SI1077X	183Kb / 8P	P-Channel 20 V (D-S) MOSFET Rev. A, 24-Dec-12
	SI5457DC	244Kb / 11P	P-Channel 20 V (D-S) MOSFET Rev. A, 06-Sep-10
Analog Power	AM4421P	423Kb / 5P	P-Channel 20-V (D-S) MOSFET

More results

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Аналогичный номер детали - SI5481DU-T1-GE3

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