TSHG5210 datasheet(4/5 Pages) VISHAY

номер детали	TSHG5210

подробное описание детали	High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero

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производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

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For technical questions, contact: emittertechsupport@vishay.com

Document Number: 81810

194

Rev. 1.1, 04-Sep-08

TSHG5210

Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS

Compliant, 850 nm, GaAlAs Double Hetero

PACKAGE DIMENSIONS in millimeters

A

C

1.2

+ 0.2

- 0.1

0.5

+ 0.15

- 0.05

5 ± 0.15

2.54 nom.

0.5

+ 0.15

- 0.05

AREA NOT PLANE

R 2.49 (sphere)

6.544-5258.02-4

Issue: 5; 03.08.98

95 10916

technical drawings

according to DIN

specification

Аналогичный номер детали - TSHG5210

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	TSHG5210	113Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	TSHG5210	107Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG5210	107Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHG5210	113Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	TSHG5210	109Kb / 5P	High Speed Infrared Emitting Diode

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	TSHG5410	112Kb / 5P	High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Rev. 1.1, 04-Sep-08
	TSHG6410	111Kb / 5P	High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Rev. 1.1, 04-Sep-08
	VSMG3700	138Kb / 6P	High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Rev. 1.2, 04-Sep-08
	TSHG6210	110Kb / 5P	High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Rev. 1.1, 04-Sep-08
	TSHG6410	103Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 08-Jul-09
	TSHG6200	116Kb / 6P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.6, 04-Dec-07
	TSHG5410	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
	TSHG6200	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG5210	107Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHG6410	112Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023