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BAR63V-06W датащи(PDF) 1 Page - Vishay Siliconix |
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BAR63V-06W датащи(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BAR63V-06W Document Number 85700 Rev. 1.3, 15-Apr-05 Vishay Semiconductors www.vishay.com 1 18381 1 2 3 12 3 RF PIN Diodes - Dual, Common Anode in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diode are wireless, mobile and TV-systems. Features • Low forward resistance • Very small reverse capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For frequency up to 3 GHz RF-signal tuning Mobile, wireless and TV-Applications Mechanical Data Case: SOT-323 Plastic case Weight: approx. 6.0 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Electrical Characteristics Tamb = 25 °C, unless otherwise specified Part Ordering code Marking Remarks BAR63V-06W BAR63V-06W-GS18 or BAR63V-06W-GS08 CW6 Tape and Reel Parameter Test condition Symbol Value Unit Reverse voltage VR 50 V Forward current IF 100 mA Junction temperature Tj 150 °C Storage temperature range Tstg - 55 to + 150 °C Parameter Test condition Symbol Min Typ. Max Unit Reverse voltage IR = 10 µAVR 50 V Reverse current VR = 35 V IR 10 nA Forward voltage IF = 100 mA VF 1.2 V Diode capacitance f = 1 MHz, VR = 0 CD 0.28 pF f = 1 MHz, VR = 5 V CD 0.23 0.3 pF e3 |
Аналогичный номер детали - BAR63V-06W |
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Аналогичное описание - BAR63V-06W |
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