поискавой системы для электроныых деталей |
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3N80-TF3-T датащи(PDF) 2 Page - Unisonic Technologies |
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3N80-TF3-T датащи(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 3N80 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-283.a ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 800 V Drain-Gate Voltage (RG=20kΩ) VDGR 800 V Gate-Source Voltage VGSS ±30 V Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V Gate Source ESD(HBM-C=100pF, R=1.5KΩ) VESD(G-S) 2 V Insulation Withstand Voltage (DC) TO-220F VISO 2500 V Avalanche Current (Note 2) IAR 2.5 A Continuous Drain Current ID 2.5 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 170 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 70 Power Dissipation TO-220F PD 25 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note:1. 2. 3. 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by TJ(MAX) starting TJ=25 °C, ID=IAR, VDD=50V ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220 62.5 Junction-to-Ambient TO-220F θJA 62.5 °C/W TO-220 1.78 Junction-to-Case TO-220F θJC 5 °C/W ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=1mA 800 V Drain-Source Leakage Current IDSS VDS=800V, VGS=0 V 1 μA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0 V ±10 μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=50μA 3 3.75 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.25A 3.8 4.5 Ω Forward Transconductance (Note 1) gFS VDS=15V, ID=1.25A 2.1 S DYNAMIC CHARACTERISTICS Input Capacitance CISS 485 pF Output Capacitance COSS 57 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1MHz 11 pF Equivalent Output Capacitance (Note 2) COSS(EQ) VGS=0V, VDS=0V~640V 22 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 17 ns Turn-On Rise Time tR 27 ns Turn-Off Delay Time tD(OFF) 36 ns Turn-Off Fall Time tF VDD=400V, ID=1.25 A, RG=4.7Ω VGS=10 V 40 ns Total Gate Charge QG 19 nC Gate-Source Charge QGS 3.2 nC Gate-Drain Charge QDD VDD=640V, ID=2.5A, VGS=10V 10.8 nC |
Аналогичный номер детали - 3N80-TF3-T |
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Аналогичное описание - 3N80-TF3-T |
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