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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TS616IDWT датащи(PDF) 5 Page - STMicroelectronics |
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TS616IDWT датащи(HTML) 5 Page - STMicroelectronics |
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5 / 27 page  TS616 5/27 ELECTRICAL CHARACTERISTICS V CC = ±2.5Volts, Rfb=910Ω,Tamb = 25°C (unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit DC PERFORMANCE Vio Input Offset Voltage Tamb 0.2 2.5 mV Tmin. < Tamb < Tmax. 1 ∆V io Differential Input Offset Voltage Tamb = 25°C 2.5 mV Iib+ Positive Input Bias Current Tamb 430 µA Tmin. < Tamb < Tmax. 7 Iib- Negative Input Bias Current Tamb 1.1 11 µA Tmin. < Tamb < Tmax. 1.2 ZIN+ Input(+) Impedance 71 k Ω ZIN- Input(-) Impedance 62 Ω CIN+ Input(+) Capacitance 1.5 pF CMR Common Mode Rejection Ratio 20 log ( ∆V ic/∆Vio) ∆V ic = ±1V 55 61 dB Tmin. < Tamb. < Tmax. 60 SVR Supply Voltage Rejection Ratio 20 log ( ∆V cc/∆Vio) ∆V cc=±2V to ±2.5V 63 79 dB Tmin. < Tamb. < Tmax. 78 ICC Total Supply Current per Operator No load 11.5 15 mA DYNAMIC PERFORMANCE and OUTPUT CHARACTERISTICS ROL Open Loop Transimpedance Vout = 2Vp-p, RL = 10Ω 24.2 M Ω Tmin. < Tamb. < Tmax. 1.5 BW -3dB Bandwidth Small Signal Vout<20mVp AV = 12dB, RL = 10Ω 20 28 MHz Full Power Bandwidth Large Signal Vout = 1.4Vp AV = 12dB, RL = 10Ω 20 Gain Flatness @ 0.1dB Small Signal Vout<20mVp AV = 12dB, RL = 10Ω 5.7 MHz Tr Rise Time Vout = 2.8Vp-p, AV = 12dB RL = 10Ω 11 ns Tf Fall Time Vout = 2.8Vp-p, AV = 12dB RL = 10Ω 11.5 ns Ts Settling Time Vout = 2.2Vp-p, AV = 12dB RL = 10Ω 39 ns SR Slew Rate Vout = 2.2Vp-p, AV = 12dB RL = 10Ω 100 130 V/ µs VOH High Level Output Voltage RL=10Ω Connected to GND 1.5 1.7 V VOL Low Level Output Voltage RL=10Ω Connected to GND -1.9 -1.7 V Iout Output Sink Current Vout = -1.25Vp -300 -400 mA Tmin. < Tamb < Tmax. -360 Output Source Current Vout = +1.25Vp 200 270 Tmin. < Tamb < Tmax. 240 |
Аналогичный номер детали - TS616IDWT |
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Аналогичное описание - TS616IDWT |
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