BAS32L_6

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 06 — 29 October 2008

3 of 10

NXP Semiconductors

BAS32L

High-speed switching diode

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

[1]

[2]

junction temperature

-

200

°C

ambient temperature

−65

+200

°C

storage temperature

−65

+200

°C

Table 5.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1] -

-

350

K/W

thermal resistance from

junction to solder point

-

-

300

K/W

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

620

-

750

mV

-

-

1000

mV

-

-

930

mV

reverse current

--25

nA

--5

µA

--50

µA

-

-

100

µA

diode capacitance

-

-

2

pF

reverse recovery

time

[1] --4

ns

forward recovery

voltage

[2] -

-

2.5

V