SI6880AEDQ datasheet(2/4 Pages) VISHAY

номер детали	SI6880AEDQ

подробное описание детали	N-Channel 1.8-V (G-S) Battery Switch with ESD Protection

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Document Number: 72313

S-60422-Rev. B, 20-Mar-06

Vishay Siliconix

Si6880AEDQ

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C unless noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.40

0.90

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

± 1

µA

VDS = 0 V, VGS = ± 12 V

± 10

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

µA

VDS = 20 V, VGS = 0 V, TJ = 70 °C

25

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

20

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 7.2 A

0.014

0.018

Ω

VGS = 2.5 V, ID = 6.5 A

0.016

0.022

VGS = 1.8 V, ID = 6.0 A

0.018

0.025

Forward Transconductancea

gfs

VDS = 10 V, ID = 7.2 A

45

S

Diode Forward Voltagea

VSD

IS = 1.5 A, VGS = 0 V

0.61

1.1

V

Dynamicb

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V, ID = 7.2 A

22

35

nC

Gate-Source Charge

Qgs

2

Gate-Drain Charge

Qgd

3.6

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω

1.0

1.5

ns

Rise Time

tr

1.6

2.5

Turn-Off Delay Time

td(off)

610

Fall Time

tf

5.5

10

Output Characteristics

0

6

12

18

24

30

0

1234

5

VDS - Drain-to-Source Voltage (V)

VGS = 5 thru 2 V

1.5 V

Transfer Characteristics

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

VGS - Gate-to-Source Voltage (V)

- 55 °C

TC = 125 °C

25 °C

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производитель	номер детали	датащи	подробное описание детали
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