IRF6N40

Page 2

ELECTRICAL CHARACTERISTICS

.

Characteristic

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

A)

400

V

Drain-Source Leakage Current

)

25

100

A

Gate-Source Leakage Current-Forward

100

nA

Gate-Source Leakage Current-Reverse

-100

nA

Gate Threshold Voltage

A)

2.0

4.0

V

1.0

2.9

mhos

Input Capacitance

515

720

pF

Output Capacitance

185

260

pF

Reverse Transfer Capacitance

f = 1.0 MHz)

15

30

pF

Turn-On Delay Time

7

10

ns

Rise Time

11

20

ns

Turn-Off Delay Time

19

40

ns

Fall Time

10

20

ns

Total Gate Charge

9.5

nC

Gate-Source Charge

2

nC

Gate-Drain Charge

3

nC

Internal Drain Inductance

(Measured from the drain lead 0.25” from package to center of die)

4.5

nH

Internal Drain Inductance

(Measured from the source lead 0.25” from package to source bond pad)

7.5

nH

SOURCE-DRAIN DIODE CHARACTERISTICS

Reverse Recovery Charge

1.6

µC

Forward Turn-On Time

**

Reverse Recovery Time

(Note 4)

270

ns

Diode Forward Voltage

(Note 4)

1.5

V

Note

(1)

Repetitive rating; pulse width limited by max. junction temperature

(2)

(3)

4.5A, di/dt

150

(4)

Pulse Test: Pulse Width

300µs, Duty Cycle

2%

** Negligible, Dominated by circuit inductance