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BAR81W датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BAR81W датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type www.kexin.com.cn 1 Diodes SOT-343 Unit: mm Silicon RF Switching Diode BAR81W Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 30 V Forward current IF 100 m A Total power dissipation, TS = 103 Ptot 100 m W Junction tem perature Tj 150 Operating tem perature range Top -55to+ 125 Storage tem perature range Tstg -55to+ 150 Junction - am bient 1) Rth JA 200 K/W Junction - soldering point Rth JS 120 K/W Note 1.Package m ounted on alum ina 15m m 16.7m m 0.7m m Electrical Characteristics Ta = 25 Parameter Symbol Test Condition Min Typ Max Unit Reverse current IR VR = 20 V 20 nA Forward voltage VF IF = 100 mA 0.93 1 V VR =1V,f=1MHz 0.6 VR = 3 V, f = 1 MHz 0.57 Forward resistance rf IF = 5 mA, f = 100 MHz 0.7 Series inductance trr 0.15 nH pF Diode capacitance CT Marking Marking BBs |
Аналогичный номер детали - BAR81W |
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Аналогичное описание - BAR81W |
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