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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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1N4150 датащи(PDF) 1 Page - Vishay Siliconix |
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1N4150 датащи(HTML) 1 Page - Vishay Siliconix |
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1 / 3 page  1N4150 Vishay Telefunken Rev. 2, 01-Apr-99 1 (3) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85522 Silicon Epitaxial Planar Diode Features D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in com- puter and industrial applications 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage VRRM 50 V Reverse voltage VR 50 V Peak forward surge current tp=1ms IFSM 4 A Forward current IF 600 mA Average forward current VR=0 IFAV 300 mA Power dissipation l=4mm, TL=45°C PV 440 mW l=4mm, TLx25°C PV 500 mW Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, TL=constant RthJA 350 K/W |
Аналогичный номер детали - 1N4150 |
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Аналогичное описание - 1N4150 |
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