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2PD1820AS датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

номер детали 2PD1820AS
подробное описание детали  NPN General Purpose Transistor
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производитель  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
домашняя страница  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2PD1820AS датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2PD1820AS Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
NPN General Purpose Transistor
2PD1820A
Features
High current (max. 500 mA).
Low voltage (max. 50 V).
Low collector-emitter saturation voltage (max. 600 mV).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5V
Collector current
IC
500
mA
Peak collector current
ICM
1A
Peak base current
IBM
200
mA
Total power dissipation
Ptot
200
mW
Storage temperature
Tstg
-65to+150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65to+150
Thermal resistance from junction to ambient
Rth j-a
625
K/W
hFE Classification
TYPE
2PD1820AQ
2PD1820AR
2PD1820AS
Marking
AQ
AR
AS
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
IE =0; VCB = 20 V
10
nA
IE =0; VCB =20V; Tj = 150
5ìA
Emitter cut-off current
IEBO
IC =0; VEB =4V
10
nA
DC current gain
2PD1820AQ
2PD1820AR
2PD1820AS
hFE
IC = 150 mA; VCE =10V; *
85
120
170
170
240
340
Collector-emitter saturation voltage
VCE(sat) IC = 300 mA; IB = 30 mA; *
600
mV
Collector capacitance
Cc
IE =ie=0; VCB =10V; f =1MHz
15
pF
Transition frequency
fT
IC =50mA; VCE =10V; f =100 MHz;*
150
MHz
* Pulse test: tp
300 ìs; ä
0.02.
1 Emitter
2 Base
3 Collector


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