поискавой системы для электроныых деталей |
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2SC4177 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC4177 датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 1 Emitter 2 Base 3 Collector NPN Silicon Epitaxia 2SC4177 Features High dc current gain High voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5V Collector current IC 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Storage temperature Tstg -55to+150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 60V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB =5V, IC =0 0.1 ìA DC current gain * hFE VCE =6V , IC = 1.0mA 90 200 600 Collector-emitter saturation voltage * VCE(sat) IC = 100mA, IB = 10mA 0.15 0.3 V Base-emitter saturation voltage * VBE(sat) IC = 100mA, IB = 10mA 0.86 1.0 V Base emitter voltage * VBE VCE =6V, IC = 1.0mA 0.55 0.62 0.65 V Gain bandwidth product fT VCE =6V, IE = -10mA 250 MHz Output capacitance Cob VCE =6V, IE = 0, f = 1MHz 3.0 pF *. PW 350ìs,duty cycle 2% hFE Classification Marking L4 L5 L6 L7 hFE 90 180 135 270 200 400 300 600 |
Аналогичный номер детали - 2SC4177 |
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Аналогичное описание - 2SC4177 |
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