2SC3356 datasheet(1/1 Pages) KEXIN

номер детали	2SC3356

подробное описание детали	NPN Silicon Epitaxial Transistor

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NPN Silicon Epitaxial Transistor

2SC3356

Features

Low noise and high gain.

NF = 1.1 dB Typ., Ga =11dBTyp.@VCE =10V,IC =7mA,f=1.0 GHz

High power gain.

MAG = 13 dB Typ. @VCE =10V,IC =20mA, f=1.0GHz

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

20

V

Collector to emitter voltage

VCEO

12

V

Emitter to base voltage

VEBO

3.0

V

Collector current (DC)

IC

100

mA

Total power dissipation

Ptot

200

mW

Junction temperature

Tj

150

Storage temperature range

Tstg

-65 to +150

hFE Classification

Marking

R23

R24

R25

Rank

Q

R

S

hFE

50

100

80

160

125

250

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB =10V,IE =0mA

1.0

A

Emitter cutoff current

IEBO

VEB =1.0 V, IC =0mA

1.0

A

DC current gain *

hFE

VCE =10V,IC = 20 mA

50

120

250

Insertion power gain

S21e

2

VCE =10V,IC =20mA,f=1GHz

11.5

dB

Noise figure

NF

VCE =10V,IC = 7 mA, f = 1 GHz

1.1

2.0

dB

Reverse transfer capacitance

Cre

VCB =10V,IE = 0 mA, f = 1 MHz

0.55

1.0

pF

Transition frequency

fT

VCE =10V,IC =20mA

7

GHz

*. Pulse measurement: PW

350

s, Duty Cycle

2%.

Аналогичный номер детали - 2SC3356

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