BF994S datasheet(1/7 Pages) VISHAY

номер детали	BF994S

подробное описание детали	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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BF994S

Vishay Telefunken

www.vishay.de

• FaxBack +1-408-970-5600

Rev. 3, 20-Jan-99

1 (7)

Document Number 85008

N–Channel Dual Gate MOS-Fieldeffect Tetrode,

Depletion Mode

Electrostatic sensitive device.

Observe precautions for handling.

Applications

Input- and mixer stages especially VHF TV-tuners.

Features

D Integrated gate protection diodes

D High cross modulation performance

D Low noise figure

D High AGC-range

D Low feedback capacitance

D Low input capacitance

13 579

21

4

3

94 9279

BF994 Marking: MG

Plastic case (SOT 143)

1=Source, 2=Drain, 3=Gate 2, 4=Gate 1

G

2

G

1

D

S

12623

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Type

Symbol

Value

Unit

Drain - source voltage

VDS

20

V

Drain current

ID

30

mA

Gate 1/Gate 2 - source peak current

±IG1/G2SM

10

mA

Total power dissipation

Tamb ≤ 60 °C

Ptot

200

mW

Channel temperature

TCh

150

°C

Storage temperature range

Tstg

–55 to +150

°C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Channel ambient

on glass fibre printed board (25 x 20 x 1.5) mm3

plated with 35

mm Cu

RthChA

450

K/W

Аналогичный номер детали - BF994S

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BF994S	41Kb / 5P	N-channel dual-gate MOS-FET July 1993
Siemens Semiconductor G...	BF994S	118Kb / 7P	Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners)
NXP Semiconductors	BF994S	9Mb / 130P	RF Manual 16th edition June 2012
Quanzhou Jinmei Electro...	BF994S	37Kb / 5P	N-channel dual-gate MOS-FET
Quanzhou Jinmei Electro...	BF994S	37Kb / 5P	N-channel dual-gate MOS-FET

More results

Аналогичное описание - BF994S

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	BF966SA	161Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 15-Apr-05
	BF995	116Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF961	160Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 25-Nov-04
Vishay Telefunken	BF966	396Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode
Vishay Siliconix	BF964S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF988	139Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 08-Jul-99
	BF998	155Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99
	BF966S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF998	318Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08
	BF988	157Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.7, 11-Sep-08

More results

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