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2SJ185 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

номер детали 2SJ185
подробное описание детали  MOS Fied Effect Transistor
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производитель  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
домашняя страница  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SJ185 датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SJ185 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
MOSFET
1
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
1GATE
2 SOURCE
3 DRAIN
www.kexin.com.cn
MOS Fied Effect Transistor
2SJ185
Features
Directly driven by Ics having a 3V poer supply.
Not necessary to consider driving current because of its high
input impedance.
Possible to reduce the number of parts by omitting the bias resistor
Marking
Marking
H12
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Draintosourcevoltage VGS=0
VDSS
-50
V
Gate to source voltage
VDS=0
VGSS
7.0
V
Drain current (DC)
ID
100
mA
Drain current(pulse) *
ID
200
mA
Power dissipation
PD
200
mW
Operating temperature
Topt
-55 to +80
Storage temperature
Tstg
-55 to +150
*PW
10 ms; d
50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain cut-off current
IDSS
VDS=-50V,VGS=0
-10
A
Gate leakage current
IGSS
VGS=
7.0V,VDS=0
5
A
Gate cut-off voltage
VGS(off)
VDS=-3V,ID=-1
A
-1.2
-1.6
-2.0
V
Forward transfer admittance
Yfs
VDS=-3V,ID=-10mA
20
42
ms
VGS=-2.5V,ID=-1mA
25
40
VGS=-4.0V,ID=-10mA
13
20
Input capacitance
Ciss
22
pF
Output capacitance
Coss
12
pF
Reverse transfer capacitance
Crss
4pF
Turn-on delay time
td(on)
80
ns
Rise time
tr
230
ns
Turn-off delay time
td(off)
40
ns
Fall time
tf
70
ns
VDS=-3V,VGS=0,f=1MHZ
VGS(on)=-3V,RG=10
,VDD=-3V,ID=-
20mA RL=150
Drain to source on-state resistance
RDS(on)


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