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BF998A датащи(PDF) 2 Page - Vishay Siliconix

номер детали BF998A
подробное описание детали  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BF998A датащи(HTML) 2 Page - Vishay Siliconix

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BF998/BF998R/BF998RW
Vishay Telefunken
www.vishay.de
• FaxBack +1-408-970-5600
Rev. 4, 23-Jun-99
2 (9)
Document Number 85011
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Drain - source voltage
VDS
12
V
Drain current
ID
30
mA
Gate 1/Gate 2 - source peak current
±IG1/G2SM
10
mA
Gate 1/Gate 2 - source voltage
±VG1S/G2S
7
V
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
–65 to +150
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35
mm Cu
RthChA
450
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max Unit
Drain - source
breakdown voltage
ID = 10 mA,
–VG1S = –VG2S = 4 V
V(BR)DS
12
V
Gate 1 - source
breakdown voltage
±IG1S = 10 mA,
VG2S = VDS = 0
±V(BR)G1SS
7
14
V
Gate 2 - source
breakdown voltage
±IG2S = 10 mA,
VG1S = VDS = 0
±V(BR)G2SS
7
14
V
Gate 1 - source
leakage current
±VG1S = 5 V,
VG2S = VDS = 0
±IG1SS
50
nA
Gate 2 - source
leakage current
±VG2S = 5 V,
VG1S = VDS = 0
±IG2SS
50
nA
Drain current
VDS = 8 V, VG1S = 0,
VG2S = 4 V
BF998/BF998R/
BF998RW
IDSS
4
18
mA
G2S
BF998A/BF998RA/
BF998RAW
IDSS
4
10.5
mA
BF998B/BF998RB/
BF998RBW
IDSS
9.5
18
mA
Gate 1 - source
cut-off voltage
VDS = 8 V, VG2S = 4 V,
ID = 20 mA
–VG1S(OFF)
1.0
2.0
V
Gate 2 - source
cut-off voltage
VDS = 8 V, VG1S = 0,
ID = 20 mA
–VG2S(OFF)
0.6
1.0
V


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