BU426 datasheet(2/2 Pages) ISC

номер детали	BU426

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU426

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.1A ;IB= 0; L= 25mH

B

375

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 2.5A; IB= 0.5A

1.5

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 4A; IB= 1.25A

B

3.0

V

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.5A

1.4

V

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 4A; IB= 1.25A

B

1.6

V

ICES

Collector Cutoff Current

VCE=800V; VBE= 0

VCE=800V; VBE= 0;TJ=125℃

1.0

2.0

mA

IEBO

Emitter Cutoff Current

VEB= 10V; IC=0

10

mA

hFE

DC Current Gain

IC= 0.6A ; VCE= 5V

15

60

Switching Times

ton

Turn-On Time

0.6

μs

tstg

Storage Time

3.5

μs

tf

Fall Time

IC= 2.5A; IB1= 0.5A; IB2= -1A;

VCC= 250V

0.15

μs

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