BD376 datasheet(2/2 Pages) ISC

номер детали	BD376

подробное описание детали	isc Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BD376/378/380

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD376

-45

BD378

-60

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BD380

IC= -100mA ; IB= 0

-80

V

BD376

-50

BD378

-75

VCBO

Collector-Base Voltage

BD380

IC= -0.1mA ; IE= 0

-100

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB= -0.1A

B

-1.0

V

VBE(on)

Base-Emitter On Voltage

IC= -1A; VCE= -2V

-1.5

V

BD376

VCB= -45V; IE= 0

-2

BD378

VCB= -60V; IE= 0

-2

ICBO

Collector Cutoff Current

BD380

VCB= -80V; IE= 0

-2

μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.1

mA

hFE-1

DC Current Gain

IC= -0.15A ; VCE= -2V

40

375

hFE-2

DC Current Gain

IC= -1A; VCE= -2V

20

Switching Times

ton

Turn-On Time

0.05

μs

toff

Turn-Off Time

IC= -0.5A; IB1= -IB2= -50mA;

VCC= -30V

0.5

μs

hFE-1 Classifications

6

10

16

25

40-100

63-160

100-250

150-375

isc Website：www.iscsemi.cn

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