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TSHA550 датащи(PDF) 1 Page - Vishay Siliconix |
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TSHA550 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 7 page VISHAY TSHA550. Document Number 81020 Rev. 1.3, 07-Apr-04 Vishay Semiconductors www.vishay.com 1 94 8390 High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs tech- nology these high intensity emitters feature about 70 % radiant power improvement. Features • Extra high radiant power • Suitable for high pulse current operation • Standard T-1¾ ( ∅ 5 mm) package • Angle of half intensity ϕ = ± 24 ° • Peak wavelength λp = 875 nm • High reliability • Good spectral matching to Si photodetectors • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Infrared remote control and free air transmission sys- tems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Reverse Voltage VR 5V Forward current IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 µsIFM 200 mA Surge Forward Current tp = 100 µsIFSM 2.5 A Power Dissipation PV 210 mW Junction Temperature Tj 100 °C Operating Temperature Range Tamb - 55 to + 100 °C Storage Temperature Range Tstg - 55 to + 100 °C Soldering Temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C Thermal Resistance Junction/ Ambient RthJA 350 K/W |
Аналогичный номер детали - TSHA550 |
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Аналогичное описание - TSHA550 |
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