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STU312D датащи(PDF) 4 Page - SamHop Microelectronics Corp. |
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STU312D датащи(HTML) 4 Page - SamHop Microelectronics Corp. |
4 / 11 page F igure 2. Trans fer C haracteris tics F igure 4. On-R es is tance Variation with Drain C urrent and Temperature ID, Drain C urrent (A) V G S , G ate-to-S ource Voltage (V ) 4 30 25 20 15 10 5 0 -55 C 20 12 8 4 0 0 0.8 1.6 2.4 3.2 4.0 4.8 25 C 1.5 1.4 1.3 1.2 1.1 1.0 0.0 0 25 50 75 T j( C ) 100 125 V G S =10V ID=10A T j, J unction T emperature ( C ) F igure 1. Output C haracteris tics V DS , Drain-to-S ource Voltage (V ) 40 32 24 16 8 0 0 0.5 1 1.5 2 2.5 3 V GS =3V V GS =3.5V T j=125 C V GS =10V F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 6 12 18 24 30 1 V GS =10V V GS =4.5V V G S =4.5V ID=8A V GS =8V Parameter Symbol Condition Min Typ Max Unit ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS = 0V, Is =10A N-Ch 0.9 1.3 -0.9 -1.3 VGS = 0V, Is =-6A P-Ch V b C Notes b.Guaranteed by design,not subject to production testing. a.Pulse Test:Pulse Width 300 s,Duty Cycle 2%. N-Channel V GS =4.5V 16 150 S T U312D 48 |
Аналогичный номер детали - STU312D |
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Аналогичное описание - STU312D |
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