BD241C datasheet(2/3 Pages) SAVANTIC

номер детали	BD241C

подробное описание детали	Silicon NPN Power Transistors

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производитель	SAVANTIC [Savantic, Inc.]

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SavantIC Semiconductor

Product Specification

2

Silicon NPN Power Transistors

BD241/A/B/C

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD241

45

BD241A

60

BD241B

80

VCEO(SUS)

Collector-emitter

sustaining voltage

BD241C

IC=30mA; IB=0

100

V

VCEsat

Collector-emitter saturation voltage

IC=3A;IB=0.6 A

1.2

V

VBE

Base-emitter on voltage

IC=3A ; VCE=4V

1.8

V

BD241/A

VCE=30V; IB=0

ICEO

Collector cut-off current

BD241B/C

VCE=60V; IB=0

0.3

mA

BD241

VCE=45V; VBE=0

BD241A

VCE=60V; VBE=0

BD241B

VCE=80V; VBE=0

ICES

Collector cut-off current

BD241C

VCE=100V; VBE=0

0.2

mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

1

mA

hFE-1

DC current gain

IC=1A ; VCE=4V

25

hFE-2

DC current gain

IC=3A ; VCE=4V

10

Аналогичный номер детали - BD241C

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	BD241C	133Kb / 3P	POWER TRANSISTORS(3A,40W)
Rectron Semiconductor	BD241C	76Kb / 3P	TO-220 - Power Transistors and Darlingtons
Motorola, Inc	BD241C	139Kb / 6P	Complementary Silicon Plastic Power Transistors
ON Semiconductor	BD241C	99Kb / 6P	Complementary Silicon Plastic Power Transistors November, 2007 - Rev. 7
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Аналогичное описание - BD241C

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MJ8504	416Kb / 6P	NPN SILICON POWER TRANSISTORS
Texas Instruments	TIPL751	224Kb / 7P	[Old version datasheet] NPN SILICON POWER TRANSISTORS
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Siemens Semiconductor G...	BU208	100Kb / 4P	NPN SILICON POWER TRANSISTORS
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Boca Semiconductor Corp...	2N6676	144Kb / 3P	NPN SILICON POWER TRANSISTORS
ON Semiconductor	TIP47	199Kb / 6P	POWER TRANSISTORS NPN SILICON 1995 REV 1
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BD241C датащи(PDF) 2 Page - Savantic, Inc.

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Аналогичный номер детали - BD241C

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