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2N2907A датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2N2907A датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 5 page Elektronische Bauelemente 2N2907A PNP Silicon General Purpose Transistor http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) V(BR)CEO –40 — Vdc Collector–Base Breakdown Voltage (IC = –10 mAdc, IE = 0) V(BR)CBO –60 — Vdc Emitter–Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO –5.0 — Vdc Collector Cut-off Current (VCE = –50 Vdc, VEB(off) = –0.5 Vdc) ICEX — –50 nAdc Collector Cut-off Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 150°C) ICBO — — –0.10 –15 µAdc Emitter Cut-off Current (VEB = –3.0 Vdc) IEBO — –100 nAdc Collector Cut-off Current (VCE = –35 V) ICEO — –100 nAdc Base Cut-off Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IBEX — –50 nAdc 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. TO–92 1 2 3 COLLECTOR 1 2 BASE 3 EMITTER Features Collector±Base Voltage Epitaxial Planar Die Construction Complementary NPN Type Available 2N2222A Ideal for Medium Power Amplification and Switching 01-Jun-2002 Rev. A Page 1 of 5 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
Аналогичный номер детали - 2N2907A |
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Аналогичное описание - 2N2907A |
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