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Dated : 02/12/2005
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 2N4400 / 2N4401
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE=1V, IC=0.1mA
ST 2N4401
hFE
20
-
-
at VCE=1V, IC=1mA
ST 2N4400
ST 2N4401
hFE
hFE
20
40
-
-
-
-
at VCE=1V, IC=10mA
ST 2N4400
ST 2N4401
hFE
hFE
40
58
-
-
-
-
at VCE=1V, IC=150mA
ST 2N4400
ST 2N4401
hFE
hFE
50
100
150
300
-
-
at VCE=2V, IC=500mA
ST 2N4400
ST 2N4401
hFE
hFE
20
40
-
-
-
-
Collector Cutoff Current
at VCB=35V
ICBO
-
100
nA
Emitter Cutoff Current
at VEB=5V
IEBO
-
100
nA
Collector Emitter Breakdown Voltage
at IC=1mA
V(BR)CEO
40
-
V
Collector Base Breakdown Voltage
at IC=100µA
V(BR)CBO
60
-
V
Emitter Base Breakdown Voltage
at IE=100µA
V(BR)EBO
6
-
V
Collector Emitter Saturation Voltage
at IC=150mA, IB=15mA
at IC=500mA, IB=50mA
VCEsat
VCEsat
-
-
0.4
0.75
V
V
Collector Saturation Voltage
at IC=150mA, IB=15mA
at IC=500mA, IB=50mA
VBEsat
VBEsat
0.75
-
0.95
1.2
V
V
Gain Bandwidth Product
at VCE=10V, IC=20mA, f=100MHz
ST 2N4400
ST 2N4401
fT
fT
200
250
-
-
MHz
MHz
Collector Base Capacitance
at VCB=5V, f=100MHz
CCBO
-
6.5
pF
Turn On Time
at VCC=30V, VBE=2V, IC=150mA, IB1=15mA
ton
-
35
ns
Turn Off Time
at VCC=30V, IC=150mA, IB1=IB2=15mA
toff
-
255
ns